Textured $hbox{n-GaN}/hbox{i-InGaN}/hbox{p-GaN}$ solar cells with interdigitated imbedded electrodes (IIEs) eliminating the electrode-shading loss have been investigated. In the absence of the electrode-shading effect, the optimized textured solar cell exhibits a conversion efficiency of 1.03, which is 78 and 47 higher than those of the conventional structure and the structure with mirror coated on silicon substrate with electrode shading, respectively. The short-circuit current density of this textured IIE device is about 0.65 $hbox{mA/cm}^{2}$, which is 71 and 44 higher than those of the two compared structures, respectively.
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