Effective Work Function Modulation by Aluminum Ion Implantation on Hf-Based High- $k$/Metal Gate pMOSFET

摘要

The impact of aluminum (Al) implantation into $hbox{TiN/HfO}_{2}hbox{/} hbox{SiO}_{2}$ on the effective work function is investigated. Al implanted through poly-Si cannot attain sufficient flatband voltage $(V_{rm FB})$ shift unless at higher implantation energy. Al implanted through TiN at 1.2 keV with a dose of $ hbox{5} times hbox{10}^{15} hbox{cm}^{-2}$ raised the $V_{ rm FB}$ to about 250 mV compared with a nonimplanted gate stack. Moreover, the $V_{rm FB}$ shift can be up to about 800 mV at 2 keV with the same dose level accompanied with slightly equivalent oxide thickness penalty and gate leakage current degradation. Optimized process window to control Al diffusion depth was essential to minimize these impacts.