InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous

摘要

We report an $hbox{InP/In}_{0.53}hbox{Ga}_{0.47}hbox{As/InP}$ double heterojunction bipolar transistor (DHBT) demonstrating simultaneous 430-GHz $f_{tau}$ and 800-GHz $f_{ max}$. The devices were fabricated using a triple mesa process with dry-etched refractory metals for emitter contact formation. The devices incorporate a 30-nm-thick InP emitter semiconductor which enables a wet-etch emitter process demonstrating 270-nm-wide emitter–base junctions. At peak RF performance, the device is operating at 30 $hbox{mW}/muhbox{m}^{2}$ with $J_{c} = hbox{18.4} hbox{mA}/muhbox{m}^{2}$ and $V_{rm ce} = hbox{1.64} hbox{V}$. The devices show a peak DC common-emitter current gain $(beta) sim hbox{20}$ and $V_{{rm BR}, {CEO}} = hbox{2.5} hbox{V}$.