Model of low frequency noise in polycrystalline silicon thin-film transistors

摘要

A model for the low frequency noise of polycrystalline silicon thin film transistors (polysilicon TFTs) is proposed. The model takes into account fluctuations of the grain boundary potential barrier induced by those of the grain boundary interface charge and fluctuations of carriers due to trapping in oxide traps located close to the interface. Using the proposed model, it is demonstrated that both grain boundary and oxide taps can be determined in polysilicon TFTs from noise measurements.