Semitransparent Field-Effect Transistors Based on ZnO Nanowire Networks

摘要

This investigation demonstrates the fabrication of semitransparent field-effect transistors with self-assembling ordered ZnO nanowire (NW) networks, using a high-$k$ $hbox{HfO}_{2}$ gate. The devices exhibit excellent optical transparency and transistor performance at on/off ratios of $#x003E; hbox{10}^{5}$, a mobility of $sim!!hbox{7.59} hbox{cm}^{2}cdot hbox{V}^{-1}cdot hbox{s}^{-1}$, and threshold voltages of $sim$4 V. Under UV illumination (3.65 eV), the devices exhibit the highest relative photoconductivity $(sim!!hbox{2.08} times hbox{10}^{5})$, corresponding to a photoresponsivity of 3.96 A/W at low operating voltages ( $V_{rm GS} = hbox{0} hbox{V}$ and $V_{rm DS} = hbox{1} hbox{V}$). The result suggests that the NW-based devices have low power consumption and high photosensivity when used in photodetection.