High-Performance a-IGZO Thin-Film Transistor Using formula formulatype='inline'tex Notation='TeX'$ hbox{Ta}_{2}hbox{O}_{5}$/tex/formula Gate Dielectric

摘要

In this letter, we report the fabrication of an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor with a high-$k$ dielectric layer on a glass substrate. The room-temperature-deposited a-IGZO channel with $hbox{Ta}_{2}hbox{O}_{5}$ exhibits the following operating characteristics: a threshold voltage of 0.25 V, a drain–source current on/off ratio of $hbox{10}^{5}$, a subthreshold gate voltage swing of 0.61 V/decade, and a high field-effect mobility of 61.5 $hbox{cm}^{2}/hbox{V}cdothbox{s}$; these characteristics make it suitable for use as a switching transistor and in low-power applications.