We report a high-performance thin-film transistor (TFT) using polycrystalline silicon (poly-Si) by short-pulse Flash-lamp annealing of amorphous silicon. Large grains of average size of $sim !!hbox{15} muhbox{m}$ with wide branchlike grain boundaries were found in the poly-Si, and there was no amorphous phase inside. The fabricated p-channel poly-Si TFT on the grain exhibited field-effect mobility of 138 $hbox{cm}^{2}/hbox{V}cdothbox{sec}$, a threshold voltage of$-$1.3 V, and an on/off current ratio of $hbox{10}^{8}$.
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