A High-Yield -Based Unipolar Resistive RAM Employing Ni Electrode Compatible With Si-Diode Selector for Crossbar Integration

摘要

In this letter, a resistive random access memory based on Ni electrode/$ hbox{HfO}_{x}$ dielectric/$hbox{n}^{+}$ Si substrate structure is demonstrated, which can be integrated with Si diode as selector for application in crossbar architecture. The unipolar device shows well-behaved memory performance, such as high on/off resistance ratio $( #x003E; hbox{10}^{3})$, good retention characteristics $( #x003E; hbox{10}^{5} hbox{s}$ at $hbox{150} ^{circ}hbox{C}$ ), satisfactory pulse switching endurance $( #x003E; hbox{10}^{5} hbox{cycles})$, and a fast programming speed of about 50 ns. More importantly, it also exhibits almost 100 device yield on a 6-in wafer.