In Situ Observation of Compliance-Current Overshoot and Its Effect on Resistive Switching

摘要

The compliance-current dependence of the resistive-switching behaviors is investigated in TaN/CuxO/Cu memory devices with 1R architecture and 1T1R architecture, respectively. The correlation of reset current I reset and on-state resistance R on can be verified by adjusting the compliance current I comp. Meanwhile, I reset and R on become independent on I comp in the 1R architecture when I comp is below 1 mA. A serious compliance-current overshoot phenomenon is in situ observed in 1R-architecture device, and it remarkably affects the resistive-switching characteristics because the compliance current dominates the memory behaviors. Therefore, resistive-switching investigation based on 1T1R architecture is much more reliable.