Oscillations in the transient current profiles of $hbox{NiO}_{x}$ resistive switching memory during set and reset pulse programming were observed and explained by the repeated threshold switching (instantaneous set/reset programming) due to the unstably applied voltage on the resistive random access memory cell during switching. Adding a feedback circuit to prevent the observed oscillations as well as limiting the parasitic capacitance are needed for stable unipolar resistive memory switching.
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