Integration Benefits of Carborane Molecular Implant for State-of-the-Art 28-nm Logic pFET Device Manufacturing

摘要

In this letter, for the first time, the integration benefits of a molecular carborane (CBH— $hbox{C}_{2}hbox{B}_{10}hbox{H}_{12}$) implant on a state-of-the-art 28-nm logic flow are demonstrated and discussed via advanced modeling. It is shown that, by integrating CBH, pLDD formation can be optimized to provide device benefits via profile/damage engineering.