Statistical Retardation Delay of I-MOS and Its Measurement Using TDR

摘要

In this letter, we study the statistical retardation delay of the impact ionization MOSFET (I-MOS) that is observed during the turn-on transient. Since seed carriers are required to initiate an avalanche breakdown in the I-MOS, the turn-on delay of the I-MOS has an additional random component associated with the generation of seed carriers. The characteristics of this delay are statistically analyzed and measured for the first time with time-domain reflectometry. The results show a fundamental limitation of the I-MOS delay, which is directly associated with the leakage current.