High-Mobility Pentacene-Based Thin-Film Transistors With a Solution-Processed Barium Titanate Insulator

摘要

Pentacene-based organic thin-film transistors (OTFTs) with solution-processed barium titanate $(hbox{Ba}_{1.2}hbox{Ti}_{0.8}hbox{O}_{3})$ as a gate insulator are demonstrated. The electrical properties of pentacene-based TFTs show a high field-effect mobility of 8.85 $hbox{cm}^{2} cdot hbox{V}^{-1} cdot hbox{s}^{-1}$, a low threshold voltage of $-$1.89 V, and a low subthreshold slope swing of 310 mV/decade. The chemical composition and binding energy of solution-processed barium titanate thin films are analyzed through X-ray photoelectron spectroscopy. The matching surface energy on the surface of the barium titanate thin film is 43.12 $hbox{mJ} cdot hbox{m}^{-2}$, which leads to Stranski–Krastanov mode growth, and thus, high mobility is exhibited in pentacene-based TFTs.