Flexible Low-Voltage Electric-Double-Layer TFTs Self-Assembled on Paper Substrates

摘要

Flexible low-voltage electric-double-layer (EDL) thin-film transistors (TFTs) with a patterned indium–tin–oxide (ITO) channel are self-assembled on paper substrates by only one shadow mask at room temperature. The operation voltage is 1.5 V when a microporous $hbox{SiO}_{2}$ solid electrolyte with large EDL capacitance is used as the gate dielectric. Such flexible TFTs operate in a full-depletion mode with a high mobility of 25.5 $hbox{cm}^{2}/ hbox{V}cdothbox{s}$, a low subthreshold swing of 0.16 V/decade, and a high current on/off ratio of $hbox{3} times hbox{10}^{5}$. The influence of mechanical bending to the electrical performance of the flexible EDL TFTs is investigated. A device simulator is used to simulate the electrical behavior, and a nice fitting to the experimental data is obtained.