A wide dynamic range, high current efficient switched-LNA has been developed by using 0.25 μm SiGe BiCMOS technology. The amplifier has low noise SiGe HBTs and the low toss RF MOSFET reduced silicon substrate effect at high frequency is used as a through switch of LNA. In high gain, the amplifier achieves 15.3 dB gain and 1.4 dB noise figure. In low gain mode, 1.5 dB insertion toss and +16.1 dBmIIP3 with < 10 μA are realized by the through switch.
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