High-Voltage Solid-State Switches For Microsecond Pulse Power

摘要

A method that controls solid-state insulated gate bipolar transistor (IGBT) switches, allowing one to increase their ON-state duration time from fractions of microseconds up to milliseconds, is proposed. It is shown that the ON-state duration of the switches is limited only by their overheating. The modular design of the high-voltage solid-state switch with a 16-kV operating voltage and 60-A pulse current is experimentally implemented.