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机译:Atomic layer deposition, characterization, and dielectric properties of HfO2/SiO2 nanolaminates and comparisons with their homogeneous mixtures
Univ Minnesota, Dept Chem, Minneapolis, MN 55455 USA;
Univ Minnesota, Dept Elect & Comp Engn, Minneapolis, MN 55455 USA;
ALD; dielectric constant; hafnia; nanolaminates; silica; CHEMICAL-VAPOR-DEPOSITION; CARBON-FREE PRECURSOR; SILICATE THIN-FILMS; HIGH-K MATERIALS; COMPOSITIONAL SPREADS; ELECTRICAL-PROPERTIES; COMBINATORIAL CVD; TITANIUM-DIOXIDE; GATE DIELECTRICS; HAFNIUM;