Low-distortion and high output power pulse-doped GaAs MESFETs with asymmetric LDD structure

摘要

We have adopted an asymmetric LDD structure to pulse-doped FET. An n' implanted region was optimized to reduce effect of impact ionization phenomenon. As a result, an on state breakdown voltage was improved to over 22V, and a saturation output power of 905mW/mm was achieved at 15 V operation. The linearity of gm and gd were also improved, and then the highest PAE of 39.5 at low back off (IM3=-35dBc) was achieved.