Growth of Germanium Islands, Wires, or Films from CVD with a New Precursor

摘要

A wide variety of germanium (Ge) precursors have beensynthesized and extensively researched for the fabrication ofthe field effect transistor (FET) based on Ge nanowires(GeNWs),1–3 the optical device components like photodetectors including GeSi arrays,4 and the phase changerandom access memory (PCRAM) base on Ge_2Sb_2Te_5(GST).5,6 For example, low dimensional NWs haveattracted much attention in the semiconductor scienceand technology field because of their great potential in optoandmicroelectric devices.7 Therefore, various methodshave been proposed to grow them. Metal-organic(MO)CVD is a mainstay of next generation manufacturingand is especially advantageous for fabrication of films orNWs.