We explore the use of hot-wire (HW) CVD as an alternative, solvent-free technique to produce compact films similar toconventional polyaniline. Film deposition and molecular bonding are studied as functions of Ta filament temperature, anilinepressure, and substrate temperature to allow an insight into the film growth mechanism, which is postulated to depend largely onreactions of aniline with H and C atoms generated at the hot wire. The process gas, aniline, is found to cause rapid formation oftantalum carbide and carbon deposits on the hot Ta surface. The accompanying change in film quality as the filament ages isstudied.
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