A 44mm{sup}2 4-bank 8-word page-read 64Mb memory with flexible block redundancy and fast accurate word-line voltage controller

摘要

We developed the world's smallest 44mm{sup}2 64Mbit NOR Flash memory by using negative-gate channel-erasing flash cell technology, 0.16 μm process rule and 4-Bank hierarchical word-line and bit-line architecture. This chip has flexible block redundancy scheme for channel erasing cell, fast accurate word-line voltage controller for a fast erase time of 0.5sec. and 8-word page read function resulting in 3Ons effective read access.