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机译:Barrier Strain and Carbon Incorporation-Engineered Performance Improvements for AlGaN/GaN High Electron Mobility Transistors
Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan;
AlGaN/GaN HEMTs; AlN interlayer; leakage current; strain engineering; unintentional carbon incorporation;