Simulation of FeFET-Based Basic Logic Circuits and Current Sensing Amplifier

摘要

The usage of ferroelectric-gate field effect transistors (FeFET) in digital circuits has typically been its applications in memory. The use of FeFET to implement logic circuits is neither completely understood nor extensively studied. This paper presents simulations of electrical properties of a single FeFET and the resulting behavioral characterizations of FeFET-based basic logic circuits in a commercially available TCAD environment. The all-FeFET current mirror, CMOS inverter, 2-input-NAND and 2-input-NOR logic circuits show almost the same electrical characteristics as standard MOSFET ones, except for the negligible clockwise hysteresis under the condition of low voltage supply. Moreover, the all-FeFET current mode sensitive amplifier whose component units were all-FeFET common-source amplifier, current mirror and differential amplification, also works reasonably.