Modeling of a Ferroelectric Field-Effect Transistor Static Random Access Memory Cell

摘要

Ferroelectric devices provide many benefits over standard Metal-Oxide Semiconductor (MOS) devices. There is considerable interest in the aerospace industry in the reliability and radiation hardening effects that the ferroelectric memory devices provide. The modeling of a Ferroelectric Static Random Access Memory (FeSRAM) cell is to be investigated. The SRAM memory cell under investigation is a standard four transistor cell with the MOS Field-Effect Transistors (MOSFETs) replaced with Ferroelectric Field Effect Transistors (FeFETs). The SRAM FeFETs were simulated by using a previously developed model. Comparisons were made between the FeSRAM and a standard MOSFET SRAM.