Modeling of Polysilicon Depletion Effect in Recessed-Channel MOSFETs

摘要

The polysilicon depletion effect is one of the key factors that degrade MOSFETs' performance. In this letter, a polysilicon depletion model for recessed-channel (RC) MOSFETs is presented. The model shows good agreement with numerical device simulation results. We also compare the polysilicon depletion effect of RC MOSFETs to that of planar MOSFETs.