1/f Noise Expressions for Amorphous InGaZnO TFTs Considering Mobility Power-Law Parameter in Above-Threshold Regime

摘要

Analytical 1/f noise expressions are presented for amorphous InGaZnO thin-film transistors considering the well-known power-law parameter alpha in the mobility equation. The drain current noise power spectral density (PSD) is derived from Ghibaudo's carrier number fluctuation model. It is found that the parameter alpha clarifies the relationship between the drain current noise PSD and the drain current. The relationship is verified by the available experimental data.