Negative Gate Transconductance in Gate/Source Overlapped Heterojunction Tunnel FET and Application to Single Transistor Phase Encoder

摘要

Negative gate transconductance (NGT) is shown in gate/source overlapped heterojunction tunnel FET (SO-HTFET). At higher V-GS, depletion region in the gate overlapped source region reduces the electric field along channel resulting in reduced band-to-band-tunneling and NGT. Application of SO-HTFET in designing a single transistor binary phase shift-keying with significantly reduced complexity is discussed.