Stability and Low-Frequency Noise in InAs NW Parallel-Array Thin-Film Transistors

摘要

In this letter, we present the dc characteristics, stability, and low-frequency noise (LFN) measurements, for n-type indium arsenide nanowire (NW) parallel-array thin-film transistors (TFTs) with a global back gate. These devices perform with mobilities ranging from 200–1200 formula formulatype="inline"tex Notation="TeX"${rm cm}^{2}{rm V}^{-1}{rm s}^{-1}$/tex/formula and produce a threshold voltage shift less than 0.25 V after 10 000 formula formulatype="inline"tex Notation="TeX"$s$/tex /formula of stress. The resulting LFN measurements indicate that the formula formulatype="inline"tex Notation="TeX"$1/f$/tex /formula noise can be modeled by the number fluctuation model, at low drain currents, which can provide an essential guideline for the device design considerations of NW TFTs.