30 mu m- Pitch Oxide TFT-Based Gate Driver Design for Small-Size, High-Resolution, and Narrow-Bezel Displays

摘要

We report the design and fabrication of a high-yield, a high-speed, and an ultranarrow gate driver with amorphous-indium-gallium-zinc-oxide thin-film transistors (TFTs). A single stage of the gate driver consists of nine TFTs and one capacitor. For supply voltage (V-DD) of 20 V, the gate driver operates with a pulsewidth of 2 mu s, which is compatible with a 4k2k display operated at 240 Hz. In addition, the proposed gate driver is ultrasmall in physical size, which is only 30 mu m in width (pitch) and 720 mu m in length, and thus suitable for small-size, high-resolution, and narrow bezel display.