首页> 外文期刊>ieee design & test of computers >Current-based testing for deep-submicron VLSIs
【24h】

Current-based testing for deep-submicron VLSIs

机译:Current-based testing for deep-submicron VLSIs

获取原文
获取原文并翻译 | 示例
           

摘要

abstract_textpCurrent-based testing for deep-submicron VLSIs is important because of transistor sensitivity to defects as technology scales. However, unabated increases in leakage current in CMOS devices can make this testing very difficult. This article offers several solutions to this challenging problem./p/abstract_text

著录项

  • 来源
    《ieee design & test of computers》 |2001年第2期|76-84|共9页
  • 作者

    Sachdev M;

  • 作者单位

    Univ Waterloo, Dept Elect & Comp Engn, Waterloo, ON N2L 3G1, Canada;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 英语
  • 中图分类
  • 关键词

    LOW-POWER; CMOS ICS;

获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号