Bending effect on the energy of a particle in a semiconductor nanobelt

摘要

Semiconductor nanostructures have exhibited unique optoelectronic characteristics for a variety of applications, including flexible optoelectronic devices and systems. In this work, we analyze the effect of elastic bending on the eigenvalues (energies) of a particle in a semiconductor nanobelt in the framework of the single-band Schrodinger equation. The electronic state of the particle in the semiconductor nanobelt is described by a quantum well. Using the Airy functions, both the wave function and characteristic equation of the particle are obtained. Numerical results for an electron in a CdSe nanobelt reveal that the ground-state energy of the electron in the bent nanobelt decreases with the increase of the bending deformation and the change of the ground-state energy of the electron in the bent nanobelt decreases with the decrease of the nanobelt thickness.