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首页> 外文期刊>Annals of Physics >Fractal superconductivity near localization threshold
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Fractal superconductivity near localization threshold

机译:分形超导接近局部化阈值

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We develop a semi-quantitative theory of electron pairing and resulting superconductivity in bulk "poor conductors" in which Fermi energy E_F is located in the region of localized states not so far from the Anderson mobility edge E_c. We assume attractive interaction between electrons near the Fermi surface. We review the existing theories and experimental data and argue that a large class of disordered films is described by this model. Our theoretical analysis is based on analytical treatment of pairing correlations, described in the basis of the exact single-particle eigenstates of the 3D Anderson model, which we combine with numerical data on eigenfunction correlations. Fractal nature of critical wavefunction's correlations is shown to be crucial for the physics of these systems. We identify three distinct phases: 'critical' superconductive state formed at E_F=E_c, superconducting state with a strong pseudo-gap, realized due to pairing of weakly localized electrons and insulating state realized at E_F still deeper inside a localized band. The 'critical' superconducting phase is characterized by the enhancement of the transition temperature with respect to BCS result, by the inhomogeneous spatial distribution of superconductive order parameter and local density of states. The major new feature of the pseudo-gapped state is the presence of two independent energy scales: superconducting gapΔ, that is due to many-body correlations and a new "pseudo-gap" energy scale Δ_P which characterizes typical binding energy of localized electron pairs and leads to the insulating behavior of the resistivity as a function of temperature above superconductive T_c. Two gap nature of the pseudo-gapped superconductor is shown to lead to specific features seen in scanning tunneling spectroscopy and point-contact Andreev spectroscopy. We predict that pseudo-gapped superconducting state demonstrates anomalous behavior of the optical spectral weight. The insulating state is realized due to the presence of local pairing gap but without superconducting correlations; it is characterized by a hard insulating gap in the density of single electrons and by purely activated low-temperature resistivity ln R(T)~1/T. Based on these results we propose a new "pseudo-spin" scenario of superconductor-insulator transition and argue that it is realized in a particular class of disordered superconducting films. We conclude by the discussion of the experimental predictions of the theory and the theoretical issues that remain unsolved.
机译:我们开发了一种电子配对的半定量理论,并由此得出了体积大的“不良导体”中的超导性,其中费米能量E_F位于离安德森迁移率边缘E_c不远的局部状态区域。我们假设费米表面附近的电子之间具有吸引作用。我们回顾了现有的理论和实验数据,并认为该模型描述了一大类无序电影。我们的理论分析基于配对相关性的分析处理,在3D Anderson模型的精确单粒子本征态的基础上进行了描述,并将其与本征函数相关性的数值数据相结合。临界波函数相关性的分形性质对这些系统的物理性质至关重要。我们确定了三个不同的阶段:在E_F = E_c处形成的“临界”超导状态,具有强伪间隙的超导状态(由于弱局部电子的配对而实现)和在E_F处实现的绝缘状态(仍在更深的局部带内)。 “临界”超导相的特征在于相对于BCS结果的转变温度提高,超导有序参数的空间分布不均匀以及状态的局部密度。伪能隙态的主要新特征是存在两个独立的能级:超导间隙Δ(这是由于多体相关性所致)和新的“伪能隙”能级Δ_P表征了局部电子对的典型结合能并导致电阻率的绝缘行为随超导温度T_c以上的温度而变化。伪间隙超导体的两个间隙性质显示出导致在扫描隧道光谱和点接触安德列夫光谱中看到的特定特征。我们预测伪间隙超导状态表明光谱权重的异常行为。绝缘状态是由于存在局部配对间隙而没有超导相关而实现的。其特征在于单电子密度的硬绝缘间隙和纯活化的低温电阻率ln R(T)〜1 / T。基于这些结果,我们提出了超导体-绝缘体过渡的新“伪自旋”方案,并认为它是在一类特殊的无序超导膜中实现的。我们通过对理论的实验预测和尚待解决的理论问题进行讨论来得出结论。

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