Optimized mathematical model of experimental characteristics of 14 nm TG N FinFET

摘要

Quantum effects play a dominant role in nanometric structures for which we need to use new methods to describe this phenomenon in device characterizations. In this paper an optimized mathematical model for the Tri gate (TG) N FinFET 14 nm transistor is presented. It is based on the "Bohm Quantum Potential (BQP)" theory. The result is a curve fitting of an experimental (I_(DS), V_(DS)) characteristics. The proposed model uses the Berkeley "PTM (Predictive technology mod-el)"parameters for the simulation.