Degradation study on triple junction inverted metamorphic InGaP/InGaAs-GaAsP MQW/InGaAs multiple quantum well solar cell using advanced physical models

摘要

In this work, we investigated triple-junction (3J) solar cell with inverted metamorphic structure, used for space application. Unlike conventional inverted metamorphic (IMM) InGaP/GaAs/ In_(0.30)Ga_(0.70)As, we propose inclusion of MQW in the middle GaAs for better spectral response and radiation resistance. Using Crosslight APSYS, the important non-idealities such as surface recombination velocity (SRV) and threading dislocation density (TDD) are defined and its effect on device characteristics are presented. For TDD upto 1 × 10~5 cm~(-2) in the graded buffer InGaP and the bottom In_(0.30)Ga_(0.70)As subcell, the influence on device characteristics has obtained to be very marginal. Under 1-sun AMO spectrum, the proposed triple junction InGaP/InGaAs-GaAsP MQW/InGaAs inverted metamorphic solar cell (3J MQW IMM) attained a maximum efficiency of 37.15% (without SRV) and 36.39% (at 104 cm/s SRV).