Efficient CZTSSe thin film solar cell employing MoTe_2/MoS_2 as hole transport layer

摘要

Substantial and perpetual growth of solar cell needs plentiful non-toxic materials such as silicon. CZTSSe material brings about new age solar cell which is alluring participant for high performance in comparison to other semiconductor materials. Since CZTSSe is non-toxic in nature and abundant on the earth surface and cheaper in cost, it has acceptable bandage reflecting eminent cell performance in the era of renewable source of energy. Recorded efficacy of such type of solar cell has festered up to 12% over many years. Non-radiative recombination at the heterojunction interface is the possible reason for the reduced output performance and lower output voltage. A numerical optimization technique using SCAPS-1D program has been used to evaluate the overall performance of the cell. In present work, three type of cell configuration have been studied they are cell without hole transport layer and cell with hole transport layer of MoTe_2 and MoS_2. Thickness of absorber layer, interfacial layer, for the solar cell ZnO/CdS/CZTSSe//(MoS_2 or MoTe_2)/Ni/glass has been investigated. In the present study, MoS_2 proves itself to be a better candidate for hole transport layer for fabricating CZTSSe solar cell. Operating temperature, work function and series and shunt resistance and defect states and acceptor concentration have been optimized with the yield of 21.12% efficiency. The experimental work might be assisted to the proposed work and the findings in this work might be a great interest to experimentalists to this area.