A comparative analysis of GaN and InGaN/GaN coupling channel HEMTs on silicon carbide substrate for high linear RF applications

摘要

In this work, we report comparative analysis of stable transconductance and high gain linearity for AlGaN and InAIN barrier-based HEMTs using an InGaN/GaN coupling channel with AlGaN back-barrier on Silicon carbide (SiC) substrate. The proposed InGaN/GaN coupling channel HEMTs showed flat transconductance and suppressed g_m derivatives. L_G 55 nm AlGaN (InAlN)/ GaN conventional HEMTs showed 2.9 (3.8) A/mm of I_(DS), 0.59 (0.62) S/mm of transconductance (g_m), 51.86 (27.42) V of V_(BR), 212 (233) GHz of f_T, 242 (255) GHz of f_(MAX)- Whereas, L_g 55 nm InGaN/GaN coupling channel-based AlGaN (InAlN) HEMT showed 3.3 (5.1) A/mm of I_(DS), 0.67 (0.71) S/mm of transconductance (g_m), 53.12 (41.25) V of V_(BR), 251 (273) GHz of f_T, 262 (283) GHz of f_(MAX)- Moreover, high gate voltage swing (GVS) and larger OIP3 of proposed coupling channel HEMTs are suitable candidates for next-generation high linear RF applications.