机译:50-nm Metamorphic High-Electron-Mobility Transistors With High Gain and High Breakdown Voltages
Microelectron. Center, Electron., Intell. & Support, BAE Syst., Nashua, NH, USA;
III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; submillimetre wave devices; GaAs; InAs; breakdown voltage; frequency 110 GHz; metamorphic high-electron-mobility transistors; size 50 nm; submillimeter wave FET; voltage 9 V; MODFETs; high-electron-mobility transistors (HEMTs); maximum stable gain (MSG); metamorphic HEMTs (MHEMTs); submillimeter-wave FETs;