Polaronic suppression of shuttle vibrations

摘要

A re-entrant behavior of electron shuttling is shown to occur in a nanoelectromechanical transistor made of magnetic material where spin-polarized electrons are injected into a quantum dot with a single electron level split into two by an external magnetic field. A suppression of shuttle vibrations occurs at a certain value of a bias voltage that starts to allow for transport also through the upper energy level of the dot, while for a further increase of the voltage shuttling recovers. The effect is due to a time-dependent polaronic shift of the dot energy level, which results in a reduction of the supply of electric power to the mechanical motion.