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首页> 外文期刊>Materials Chemistry Frontiers >Acetylene bridged alkoxyphenanthrene and triarylamine-based triads for low threshold voltage with high mobility OFETs
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Acetylene bridged alkoxyphenanthrene and triarylamine-based triads for low threshold voltage with high mobility OFETs

机译:乙炔桥接烷氧基菲和三芳胺基三元组,用于低阈值电压和高迁移率 OFET

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摘要

A series of new triarylamine appended alkoxyphenanthrenes connected through acetylene bridges were synthesized for high-performance p-channel OFETs. These semiconductors exhibited high-lying HOMO energy levels up to 5.16 eV, enabling hole-transport properties and reducing the energy barrier for charge injection. Phenanthrene-based organic field-effect transistors were fabricated in the bottomgated top-contact architecture, and the device performances were dramatically improved with electronrich substituents. The OFET devices exhibited a maximum charge carrier mobility of up to 3.5 cm2 V1 s1 with a high ON/OFF current ratio of 108 and the lowest threshold voltage of 3 V. Altering the donor arms in D0-p-D-p-D0 based phenanthrenes highly influences the molecular packing, thin film morphology, and charge transport of the active layer, which results in high OFET performance. The efficient p-p interactions and the crystalline nature of the films are well proved by GIXRD and SEM analyses.
机译:一系列新的triarylamine附加通过乙炔alkoxyphenanthrenes连接桥梁是高性能合成p沟道ofet。高山的HOMO能级5.16 eV,使空穴传输属性和减少电荷注入的能量势垒。Phenanthrene-based有机场效应晶体管在bottomgated捏造top-contact架构和设备性能有显著提高electronrich取代基。表现出最大的电荷载流子迁移率到3.5 cm2 V1 s1高开/关流动比率108年的最低阈值电压3 V。改变捐献武器D0-p-D-p-D0基础菲高影响的分子包装、薄膜形貌和电荷传输的活性层,导致高OFET的性能。交互和水晶的性质电影很好地证明了GIXRD和SEM分析。

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