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Ultrafast synthesis of SiC nanowire webs by floating catalysts rationalised through in situ measurements and thermodynamic calculations

机译:通过原位测量和热力学计算合理化的漂浮催化剂超快合成SiC纳米线网

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This work presents the synthesis of SiC nanowires floating in a gas stream through the vapour–liquid–solid (VLS) mechanism using an aerosol of catalyst nanoparticles. These conditions lead to ultrafast growth at 8.5 μm s−1 (maximum of 50 μm s−1), which is up to 3 orders of magnitude above conventional substrate-based chemical vapour deposition. The high aspect ratio of the nanowires (up to 2200) favours their entanglement and the formation of freestanding network materials consisting entirely of SiCNWs. The floating catalyst chemical vapour deposition growth process is rationalised through in situ sampling of reaction products and catalyst aerosol from the gas phase, and thermodynamic calculations of the bulk ternary Si–C–Fe phase diagram. The phase diagram suggests a description of the mechanistic path for the selective growth of SiCNWs, consistent with the observation that no other types of nanowires (Si or C) are grown by the catalyst. SiCNW growth occurs at 1130 °C, close to the calculated eutectic. According to the calculated phase diagram, upon addition of Si and C, the Fe-rich liquid segregates a carbon shell, and later enrichment of the liquid in Si leads to the formation of SiC. The exceptionally fast growth rate relative to substrate-based processes is attributed to the increased availability of precursors for incorporation into the catalyst due to the high collision rate inherent to this new synthesis mode.
机译:这项工作提出了SiC纳米线的合成漂浮在气流通过使用一个vapour-liquid-solid (VLS)机制催化剂纳米颗粒的气溶胶。条件导致超速增长为8.5μm s−1(最多50μm s−1),这是3个订单传统substrate-based级以上化学蒸汽沉积。的纳米线(2200)支持他们纠缠和独立的形成网络材料,完全由SiCNWs组成。浮动催化剂化学蒸汽沉积通过原位生长过程合理化抽样产品和催化剂的反应从气相气溶胶,热力学大部分的计算三元Si-C-Fe阶段图。机械的路径的选择性生长SiCNWs,与观测一致没有其他类型的纳米线(Si或C)的催化剂。接近共晶计算。相图计算,在Si和C, Fe-rich液体将碳壳,后来在Si浓缩的液体导致碳化硅的形成。相对于substrate-based快速增长是由于增加的过程可用性纳入的前兆催化剂由于碰撞率高固有的这种新的合成模式。

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