机译:接口工程稳定的化学氧化炭黑结构磷通过self-reduction AlOx原子层沉积
Dongguk Univ, Div Phys & Semicond Sci, Seoul 04620, South Korea;
Yonsei Univ, Dept Phys, Seoul 03722, South Korea;
Approximate; chemical structure; atomic layer depositionOxidizedreductionBlood pressure deviceAir exposureField effect transistorson-off;
机译:Post‐deposition annealing and interfacial atomic layer deposition buffer layers of Sb2Se3/CdS stacks for reduced interface recombination and increased open‐circuit voltages
机译:Influence of the Pore Structure of MCM-41 and SBA-15 Silica Fibers on Atomic Layer Chemical Vapor Deposition of Cobalt Carbonyl
机译:Germanium oxide mono-atomic layer prepared by chemical vapor deposition method on γ-alumina: the structure and acidic property