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Ferromagnetism in magnesium chloride monolayer with an unusually large spin-up gap

机译:在氯化镁单层铁磁性异常大的向上缺口

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The primary research target of the rapidly evolving spintronic industry is to design highly efficient novel materials that consume very low power and operate with high speed. Main group based ferromagnetic half-metallic materials are very promising due to their long spin-relaxation time. In recent years, the discovery of superconducting state with high critical temperature in a magnesium based system (MgB2) invigorated researchers due to its simple crystal structure and intriguing results, leading to its use as a good material for large scale application in electronic devices. Here, we report ferromagnetism and strong half-metallicity in another Mg-based system, which can be a promising material for spintronics based devices rather than for electronic devices (such as MgB2). Based on the first principle calculations, we report here a series of magnetic half-metallic magnesium chloride based monolayers Mg0.890.11Cl2, Mg0.780.22Cl2, and Mg0.670.33Cl2 (MgCl3). This MgCl3 phase has a similar pattern as that in CrI3, which has drawn remarkable attention worldwide as the first intrinsic 2D magnet. These magnesium chloride monolayer based systems are 100 spin-polarized, and promising for scattering-less transport due to strong half-metallicity and large spin-up gap (approximate to 6.135-6.431 eV). The unusually large spin-up gap in our proposed system may shield spin current leakage even in nanoscale device. Further investigation explores a ferromagnetic ordering in Mg0.890.11Cl2 with a Curie temperature of 250 K, which makes the system viable for operation at temperatures slightly lower than the room temperature. High magnetic anisotropy energy (MAE) in Mg0.890.11Cl2 (452.84 eV) indicates that the energy required to flip the spin is high, and therefore inhibits spin fluctuation. These results suggest a promising way to discover MgCl2-based 2D spin valves, GMR, TMR and other spintronics devices.
机译:快速的主要研究目标自旋电子行业是设计高度发展高效的新颖材料,消耗非常低权力和高速运行。基于铁磁half-metallic材料非常有前途的由于他们的自旋弛豫时间。超导高临界状态温度在一个基于镁系统(硼化镁)精力充沛的人员由于其简单的晶体结构和有趣的结果,导致它作为大型的好材料在电子设备中的应用。铁磁性和强劲的half-metallicity报告在另一个Mg-based系统,这可能是一个有前途的材料基于自旋电子学器件而不是电子设备(如硼化镁)。我们在这里报告一个一系列的磁half-metallic氯化镁为单层膜[Mg0.890.11Cl2 Mg0.780.22Cl2, Mg0.670.33Cl2(MgCl3)]。在CrI3,引起显著关注全球第一内在2 d磁铁。系统自旋极化的100%,并承诺由于强烈scattering-less运输half-metallicity和大型向上缺口6.135 - -6.431 eV(近似)。在计划的系统可能向上大差距即使在纳米级盾自旋电流泄漏设备。在Mg0.890.11Cl2铁磁排序居里温度250 K,使系统可行的操作温度略低于室温。在Mg0.890.11Cl2磁各向异性能(美)(452.84 eV)表明,所需要的能量自旋翻转很高,因此抑制自旋涨落。有前途的方法来发现MgCl2-based 2 d旋转阀门、巨磁电阻、咯等自旋电子学设备。

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