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机译:异常氧化及其对电的影响运输来自表面化学大面积的不稳定,few-layer 1 t -MoTe2电影
Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai Synchrotron Radiat Facil, Shanghai 201204, Peoples R China;
Huazhong Univ Sci & Technol, State Key Lab Mat Proc & Die & Mould Technol, Sch Mat Sci & Engn, Ctr Joining & Elect Packaging, Wuhan 430074, Hubei, Peoples R China;
Weyl semimetals; Surface oxidation; Oxidation processPhase stabilityOxidation resistanceFilmsElectronegativitymowingAnomalousOxidationtelluriumtransport propertieschemical compoundshigh resistance;
机译:Controllable growth of large-area 1T' , 2H ultrathin MoTe2 films, and 1T'-2H in-plane homojunction
机译:CuGa_xSe_y chalcopyrite-related thin films grown by chemical close-spaced vapor transport (CCSVT) for photovoltaic application: Surface- and bulk material properties, oxidation and surface Ge-doping
机译:Thermal instability originating from the interface between organic–inorganic hybrid perovskites and oxide electron transport layers
机译:Thermal crystallization kinetic and electrical properties of partly crystallized amorphous indium oxide thin films sputtering deposited in the presence or the absence of water vapor