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机译:每十年既mV ion-gel-gated切换In-Sn-O晶体管nano-thick电荷捕获层
low-power electronics; Drain current; Transistor Device ComponentField effect transistorsCHARGE TRAPPINGnew methods;
机译:关于获得类似mOsFET的性能和sub-60的可能性 1D断裂隧道晶体管的mV / decade摆幅
机译:TRaNsIsTOR DRIVEN BEam sWITCHING TUBE DECaDE COUNTER