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Reversible uptake and release of sodium ions in layered SnS2-reduced graphene oxide composites for neuromorphic devices

机译:可逆的钠离子的吸收和释放分层SnS2-reduced氧化石墨烯复合材料神经形态设备

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With the advent of brain-inspired computing for complex data processing, emerging nonvolatile memories have been widely studied to develop neuromorphic devices for pattern recognition and deep learning. However, the devices still suffer from limitations such as nonlinearity and large write noise because they adopt a stochastic switching approach. Here, we suggest a biomimetic three-terminal electrochemical artificial synapse that is operated by a conductance change in response to intercalation of sodium (Na+) ions into a layered SnS2-reduced graphene oxide (RGO) composite channel. SnS2-RGO can reversibly uptake and release Na+ ions, so the conductance of the channel in artificial synapse can be controlled effectively and thereby it can emulate essential synaptic functions including short-term plasticity, spatiotemporal signal processing, and transition from short-term to long-term plasticity. The artificial synapse also shows linear and symmetric potentiation/depression with low cycle-to-cycle variation; these responses could improve the write linearity and reduce the write noise of devices. This study demonstrates the feasibility of next-generation neuromorphic memory using ion-based electrochemical devices that can mimic biological synapses with the migration of Na+ ions.
机译:随着brain-inspired计算复杂的数据处理,新兴的非易失性记忆已经被广泛研究开发模式识别和神经形态设备深度学习。从非线性和大等局限性噪音,因为他们采用随机写切换的方法。三端电化学人工突触这是由电导的变化应对夹层的钠(Na +)离子成一个分层SnS2-reduced石墨烯氧化物(RGO)综合频道。和释放Na +离子,所以的电导频道在人工synapse可以控制有效的,从而可以模拟至关重要突触功能包括短期可塑性、时空信号处理从短期到长期的转变可塑性。线性和对称/抑郁与强化低cycle-to-cycle变异;可以提高编写线性和减少写噪音的设备。新一代的神经形态的可行性内存使用ion-based电化学设备能模仿生物的突触Na +离子的迁移。

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