Graphdiyne for multilevel flexible organic resistive random access memory devices

摘要

Graphdiyne (GD), a new carbon allotrope with a 2D structure comprising benzene rings and carbon- carbon triple bonds, is employed in fabricating resistive random access memory (RRAM) devices. On inserting a GD nanoparticle (NP) discontinuous layer and thermally depositing an Al-Al2O3 core-shell (Al-Al2O3) NP discontinuous layer in insulating polyimide (PI) films on a PET substrate, the designed flexible three-state memory device is realized (PET/Ag/PI/GD/PI/Al-Al2O3/PI/Al). GD NPs and Al-Al2O3 NPs function as two types of strong electron traps with different energy levels, resulting in two ON states. The OFF state and the two ON states possess long retention times of more than 10~4 s. Our results here demonstrate that GD could have great potential applications in future information storage technologies.