机译:应变及其结构性缺陷对电化学性能的影响核心/硅锗纳米线异质结构
Los Alamos Natl Lab, Ctr Integrated Nanotechnol, Los Alamos, NM 87545 USA;
Indiana Univ, Dept Phys, Bloomington, IN 47405 USA;
Heterostructures; Silicon germanium; causes of defectstacking faultsNanowireInterstitial defectslithiationlithium ion batterystrain induced;
机译:Core-shell FeNi-NixFe_——3-x O_4 nanowires
机译:$ {rm Ge} {hbox {-}} {rm Si} _ {1 {hbox {-}} {rm x}} {rm Ge} _ {rm x} $ Core-Shell Nanowire $ n的实现和扩展场效应管
机译:Investigation on the Electrochemical Performance of the Silicon and Germanium Based Lithium-Ion Batteries =硅基与锗基锂离子电池的电化学性能研究
机译:Facile synthesis of one-dimensional crystalline/amorphous tungsten oxide core/shell heterostructures with balanced electrochromic properties