Dependence of Interface-State Density on Three Dimensional Silicon Structure Measured by Charge-Pumping Method

摘要

Dependence of interface-state density (Dit) on three dimensional (3D) Si channels with a rectangular cross section of various width and shape was measured by charge-pumping method with gated PIN-diode configuration formed on silicon-on-insulator (SOI) wafer. The increase in Dit was observed with decreasing the width of the fin structure.