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Direct MoB MBene domain formation in magnetron sputtered MoAlB thin films

机译:直接暴徒MBene域形成磁控管气急败坏的MoAlB薄膜

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摘要

Two-dimensional (2D) inorganic transition metal boride nanosheets are emerging as promising post-graphene materials in energy research due to their unique properties. State-of-the-art processing strategies are based on chemical etching of bulk material synthesized via solid-state reaction at temperatures above 1000 degrees C. Here, we report the direct formation of MoB MBene domains in a MoAlB thin film by Al deintercalation from MoAlB in the vicinity of AlOx regions. Hence, based on these results a straightforward processing pathway for the direct formation of MoB MBene-AlOx heterostructures without employing chemical etching is proposed here.
机译:二维(2 d)无机过渡金属硼化nanosheets正在成为有前途的由于post-graphene材料在能源研究他们独特的属性。基于化学处理策略蚀刻的散装材料合成通过固态反应在温度高于1000度c。在这里,我们报告的直接形成的暴徒MBene域MoAlB铝薄膜从附近的MoAlB deintercalationAlOx地区。简单直接的处理途径形成的暴徒MBene-AlOx异质结构提出了采用化学腐蚀在这里。

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