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首页> 外文期刊>Nanoscale >High-efficiency perovskite nanocrystal light-emitting diodesviadecorating NiO(x)on the nanocrystal surface
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High-efficiency perovskite nanocrystal light-emitting diodesviadecorating NiO(x)on the nanocrystal surface

机译:高效钙钛矿纳米晶体发光diodesviadecorating NiO (x)上纳米晶体表面

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Nickel oxides exhibit a great potential as hole transport layers for the fabrication of efficient perovskite light-emitting diodes (LEDs) due to their high carrier mobility and good energy band matching with perovskite nanocrystals. In this work, nickel oxides were directly decorated on the CsPbBr(3)nanocrystal surface through adsorption and a sequential oxidation treatment. The resulting sample shows a high photoluminescence quantum-yield of 82%. The LED using CsPbBr(3)nanocrystals with nickel oxides achieves a high external quantum efficiency (EQE) of up to 16.8% with a low turn-on voltage of 2.8 V, which is much superior to that of the counterpart LED based on pristine CsPbBr(3)nanocrystals (EQE = 0.7%, turn-on voltage = 5.6 V). The excellent performance of the nickel oxide decorated CsPbBr(3)nanocrystal device could be attributed to the better energy level matching between the decorated nanocrystals and the transport layers of the device and more balanced charge carrier injection. Furthermore, the operational lifetime of the nickel oxide decorated CsPbBr(3)nanocrystal device is 40 times longer than that of the pristine CsPbBr(3)nanocrystal device.
机译:孔镍氧化物表现出巨大的潜力传输层的制造效率钙钛矿发光二极管(led)由于高载流子迁移率和良好的能带匹配与钙钛矿纳米晶体。工作、镍氧化物直接装饰CsPbBr(3)纳米晶体表面吸附和连续的氧化处理。生成的示例显示了一个高光致发光量子产率为82%。使用CsPbBr(3)纳米晶体镍氧化物达到一个高的外部量子效率(EQE)高达16.8%的低刺激电压为2.8V,这是优越的基于原始的总统领导CsPbBr(3)纳米晶体(EQE = 0.7%,刺激电压= 5.6 V)的优秀性能氧化镍装饰CsPbBr(3)纳米晶体设备可以归因于更好的能量水平布置纳米晶体之间的匹配设备的传输层和更多平衡电荷载体注入。氧化镍的操作寿命装饰CsPbBr(3)纳米晶体设备是40倍比原始的长CsPbBr(3)纳米晶体的设备。

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